Exchange bias in Ba0.4Sr0.6TiO3/La0.7Sr0.3MnO3 heterostructures-Reference-Cited by-同舟云学术

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Exchange bias in Ba0.4Sr0.6TiO3/La0.7Sr0.3MnO3 heterostructures

Published:2017-05 Issue:5 Volume:7 Page:055824
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Singamaneni Srinivasa Rao¹²³,Prater John T.²³,Narayan Jagdish³

Affiliation:

1. Department of Physics, University of Texas at El Paso, El Paso, Texas 79968, USA

2. Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709, USA

3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

Funder

Army Research Office (ARO)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4977071

Reference22 articles.

1. HIGH-DIELECTRIC CONSTANT THIN FILMS FOR DYNAMIC RANDOM ACCESS MEMORIES (DRAM)

2. Tunable barium strontium titanate thin film capacitors for RF and microwave applications

3. (Ba,Sr)TiO3 tunable capacitors with RF commutation quality factors exceeding 6000

4. Electrically tunable materials for microwave applications

5. The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films

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