HIGH-DIELECTRIC CONSTANT THIN FILMS FOR DYNAMIC RANDOM ACCESS MEMORIES (DRAM)-Reference-Cited by-同舟云学术

HIGH-DIELECTRIC CONSTANT THIN FILMS FOR DYNAMIC RANDOM ACCESS MEMORIES (DRAM)

Published:1998-08 Issue:1 Volume:28 Page:79-100
ISSN:0084-6600
Container-title:Annual Review of Materials Science
language:en
Short-container-title:Annu. Rev. Mater. Sci.

Author:

Scott J. F.¹²

Affiliation:

1. Max-Planck Institute for Microstructural Physics, Halle, Saale D-06120, Germany;

2. School of Physics, University of New South Wales, Sydney NSW, 2052, Australia

Abstract

▪ Abstract We discuss high-dielectric films, in general, oxide ferroelectrics based on simple perovskite structures and related Aurivillius-phase layered structure perovskites employed as thin-film capacitors in dynamic random access memories (DRAMs). Emphasis is on breakdown mechanisms and limits, leakage currents, electrodes and electrode interfaces, scaling to submicron geometries, and deposition techniques.

Publisher

Annual Reviews

Subject

General Materials Science

Link

https://www.annualreviews.org/doi/pdf/10.1146/annurev.matsci.28.1.79

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