Onset of vertical threading dislocations in Si1−xGex/Si (001) at a critical Ge concentration-Reference-Cited by-同舟云学术

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Onset of vertical threading dislocations in Si1−xGex/Si (001) at a critical Ge concentration

Published:2013-11 Issue:5 Volume:1 Page:052109
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Isa Fabio,Marzegalli Anna,Taboada Alfonso G.,Falub Claudiu V.,Isella Giovanni,Montalenti Francesco,von Känel Hans,Miglio Leo

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4829976

Reference35 articles.

1. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

2. 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator

3. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

4. Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

5. Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers

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1. Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon;Journal of Applied Physics;2024-04-24

2. Liquid phase crystallization of Ge over direct Si substrate as a template for GaAs applications;2020 47th IEEE Photovoltaic Specialists Conference (PVSC);2020-06-14

3. A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon;Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII;2019-02-27

4. Dislocation-Free SiGe/Si Heterostructures;Crystals;2018-06-19

5. Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals;Journal of Applied Crystallography;2018-03-01

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