Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique-Reference-Cited by-同舟云学术

Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique

Published:2005-09-19 Issue:12 Volume:87 Page:122901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Choi Rino,Song S. C.,Young C. D.,Bersuker Gennadi,Lee Byoung Hun

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2043252

Reference9 articles.

1. Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrode, and self-aligned source and drain

2. K. Onishi, C. S. Kang, R. Choi, H.J. Cho, S. Gopalan, R. Nieh, S. Krishnan, and J. C. Lee, in 2002 IEEE International Reliability Physics Symposium Proceedings, 419 (2002).

3. Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks

4. Charge trapping and detrapping characteristics in hafnium silicate gate stack under static and dynamic stress

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