Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire-Reference-Cited by-同舟云学术

Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

Published:2013-03-04 Issue:9 Volume:102 Page:093503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fontserè A.,Pérez-Tomás A.,Placidi M.,Baron N.,Chenot S.,Moreno J. C.,Rennesson S.,Cordier Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4794411

Reference25 articles.

1. J. Everts, J. Das, J. Van den Keybus, J. Genoe, M. Germain, and J. Driesen, in 2nd IEEE Energy Conversion Congress and Exposition, ECCE 2010, Atlanta, GA, 12–16 September 2010, 3296.

2. InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment

3. Analysis of inhomogeneous Ge/SiC heterojunction diodes

4. Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal

5. High performance AlGaN/GaN power switch with HfO2 insulation

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Prediction of Anomalous Variation in GaN-based Chemical Sensors;2022 11th International Conference on Control, Automation and Information Sciences (ICCAIS);2022-11-21

2. Al0.7Ga0.3N MESFET With All-Refractory Metal Process for High Temperature Operation;IEEE Transactions on Electron Devices;2021-09

3. Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors;IEEE Journal of the Electron Devices Society;2019

4. Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor;Nanotechnology;2015-02-26