DONOR‐ACCEPTOR PAIR ABSORPTION IN GaAs DIODES AT 2.1°K
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1723565
Reference4 articles.
1. Pair Spectra in GaP
2. RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTION
3. Evidence for the Role of Donor states in GaAs Electroluminescence
4. Determination of the Effective Ionic Charge of Gallium Arsenide from Direct Measurements of the Dielectric Constant
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Radiative decay in compound semiconductors;Solid-State Electronics;1967-06
2. Chapter 13 Radiative Recombination in the III-V Compounds;Physics of III-V Compounds;1966
3. IDENTIFICATION OF LASER TRANSITIONS IN ELECTRON‐BEAM‐PUMPED GaAs;Applied Physics Letters;1965-09-15
4. Injection Mechanisms in GaAs Diffused Electroluminescent Junctions;Physical Review;1965-03-01
5. Radiative recombination from GaAs directly excited by electron beams;Solid State Communications;1964-11
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