Flat‐band voltage and surface states in amorphous silicon‐based alloy field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333976
Reference13 articles.
1. Investigation of the localised state distribution in amorphous Si films
2. Investigation of the density of localized states in a-Si using the field effect technique
3. Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductors
4. Observation of electron and hole traps in hydrogenated amorphous silicon by voltage- and laser-excited deep level transient spectroscopy
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