Electrical control of interfacial trapping for magnetic tunnel transistor on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4863689
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1. Thermal reemission of trapped electrons in SiO2
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5. Perpendicular Hot Electron Spin-Valve Effect in a New Magnetic Field Sensor: The Spin-Valve Transistor
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1. Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors;ACS Applied Materials & Interfaces;2020-04-01
2. Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures;Nano Letters;2018-11-25
3. Electrical spin injection and detection in molybdenum disulfide multilayer channel;Nature Communications;2017-04
4. Magnetic tunnel transistor with a perpendicular Co/Ni multilayer sputtered on a Si/Cu(1 0 0) Schottky diode;Journal of Physics D: Applied Physics;2016-08-04
5. Spin relaxation via exchange with donor impurity-bound electrons;Physical Review B;2015-06-19
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