Photoluminescence evidence for silicon Frenkel defects in electron irradiated 4H SiC-Reference-Cited by-同舟云学术

Photoluminescence evidence for silicon Frenkel defects in electron irradiated 4H SiC

Published:2023-04-01 Issue:4 Volume:13 Page:
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:

Author:

Steeds J. W.¹^ORCID,Sarua A.¹^ORCID

Affiliation:

1. School of Physics, University of Bristol , Bristol BS8 1TL, United Kingdom

Abstract

The nature of defects in 4H SiC was studied by means of low temperature photoluminescence before and after energy-controlled electron irradiation. Analysis of experimental data from irradiation at energies above and below the Si displacement energy together with subsequent annealing leads to the conclusion that Si Frenkel defects have been detected experimentally in this material. Reasons why these are formed in some cases rather than carbon vacancy carbon antisite pairs are explored.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0142923/16819353/045016_1_5.0142923.pdf

Reference20 articles.

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4. Theoretical study of the recombination of Frenkel pairs in irradiated silicon carbide;J. Phys.: Condens. Matter,2007

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