Pulse widths dependence of programming and erasing behaviors for diamond like carbon based resistive switching memories-Reference-Cited by-同舟云学术

Pulse widths dependence of programming and erasing behaviors for diamond like carbon based resistive switching memories

Published:2014-10-27 Issue:17 Volume:105 Page:172101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu Jianlong¹,Xie Dan¹,Zhang Chenhui²,Zhang Xiaowen¹,Peng Pinggang¹,Fu Di¹,Qian He¹,Ren Tian-ling¹,Liu Litian¹

Affiliation:

1. Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China

2. State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4898345

Reference22 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Metal–Oxide RRAM

3. Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch

4. Effects of anode materials on resistive characteristics of NiO thin films

5. All-Polymer Bistable Resistive Memory Device Based on Nanoscale Phase-Separated PCBM-Ferroelectric Blends

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