Spin depolarization under low electric fields at low temperatures in undoped InGaAs/AlGaAs multiple quantum well
Author:
Affiliation:
1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
Funder
the 973 program of China
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4898344
Reference29 articles.
1. Interfacial charge-spin coupling: Injection and detection of spin magnetization in metals
2. Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve
3. Electrical detection of spin transport in lateral ferromagnet–semiconductor devices
4. Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells
5. Electric field dependence of spin coherence in (001)GaAs∕AlxGa1−xAsquantum wells
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