Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells*

Abstract

The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.