High external emission efficiency in intentionally ordered GaInP/GaAs structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3077013
Reference18 articles.
1. High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications
2. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
3. Large (6°) Off-Angle Effects on Sublattice Ordering and Band-Gap Energy in Ga0.5In0.5P Grown on (001) GaAs Substrates
4. Surface photoabsorption study of the effect of substrate misorientation on ordering in GaInP
5. Te doping of GaInP: Ordering and step structure
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