Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition-Reference-Cited by-同舟云学术

Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition

Published:2021-07-21 Issue:3 Volume:130 Page:035106
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mošková A.¹,Moško M.¹²^ORCID,Precner M.¹^ORCID,Mikolášek M.³,Rosová A.¹^ORCID,Mičušík M.⁴^ORCID,Štrbík V.¹,Šoltýs J.¹,Gucmann F.¹^ORCID,Dobročka E.¹^ORCID,Fröhlich K.¹⁵^ORCID

Affiliation:

1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovakia

2. Faculty of Mathematics, Physics and Informatics, Comenius University, 842 48 Bratislava, Slovakia

3. Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

4. Polymer Institute, Slovak Academy of Sciences, Dúbravská cesta 9, 812 19 Bratislava, Slovakia

5. Centre for Advanced Materials Application, Slovak Academy of Sciences, Dúbravská cesta 9, 812 19 Bratislava, Slovakia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0053757

Reference52 articles.

1. Transparent conducting oxides for electrode applications in light emitting and absorbing devices

2. On the optical band gap of zinc oxide

3. Structure-function relationship between preferred orientation of crystallites and electrical resistivity in thin polycrystalline ZnO:Al films

4. Ellipsometric studies on ZnO:Al thin films: Refinement of dispersion theories

5. Characteristics of low-resistivity aluminum-doped zinc oxide films deposited at room temperature by off-axis radio-frequency sputtering on flexible plastic substrates

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