Ferroelectrics everywhere: Ferroelectricity in magnesium substituted zinc oxide thin films-Reference-Cited by-同舟云学术

Ferroelectrics everywhere: Ferroelectricity in magnesium substituted zinc oxide thin films

Published:2021-07-28 Issue:4 Volume:130 Page:044101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ferri Kevin¹^ORCID,Bachu Saiphaneendra¹^ORCID,Zhu Wanlin¹^ORCID,Imperatore Mario²^ORCID,Hayden John¹^ORCID,Alem Nasim¹,Giebink Noel²^ORCID,Trolier-McKinstry Susan¹^ORCID,Maria Jon-Paul¹

Affiliation:

1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16801, USA

2. Department of Electrical and Computer Engineering, The Pennsylvania State University, University Park, Pennsylvania 16801, USA

Funder

U.S. Department of Energy

Defense Advanced Research Projects Agency

Center for Dielectrics and Piezoelectrics, North Carolina State University

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0053755

Reference52 articles.

1. Ferroelectric HfO2-based materials for next-generation ferroelectric memories

2. Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications

3. Switching kinetics of lead zirconate titanate sub-micron thin-film memories

4. Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

5. Current status and challenges of ferroelectric memory devices

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