Molecular beam epitaxial growth and characterization of CoAl on AlAs/GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105756
Reference7 articles.
1. Epitaxial growth of GaAs/NiAl/GaAs heterostructures
2. Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructures
3. Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system
4. Interface crystallography and stability in epitaxial metal (NiAl, CoAl)/III-V Semiconductor heterostructures
5. Epitaxial metal(NiAl)-semiconductor(III–V) heterostructures by MBE
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface plasmon waveguides with gradually doped or NiAl intermetallic compound buried contact for terahertz quantum cascade lasers;Journal of Applied Physics;2003-09
2. Epitaxial growth of AlAs/CoAl/AlAs(001) heterostructures by controlling the metal surface;Journal of Applied Physics;1995-11-15
3. Epitaxy of Dissimilar Materials;Annual Review of Materials Science;1995-08
4. Epitaxial CoAl/AlAs/GaAs metal semiconductor heterostructures: Growth, structure, and electrical properties;Journal of Applied Physics;1994-01-15
5. Epitaxial growth of cobalt-gallium on gallium arsenide by organometallic chemical vapor deposition;Chemistry of Materials;1993-01-01
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