Epitaxial CoAl/AlAs/GaAs metal semiconductor heterostructures: Growth, structure, and electrical properties
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356443
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1. Local disordering in epitaxially strained CoAl films grown on GaAs (001);Journal of Applied Physics;2010-08
2. Effects of Structural Disorder on the Transport Properties ofB2-phase Fe0.52Al0.48Alloy Films;Japanese Journal of Applied Physics;1999-11-15
3. Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAl[sub x]Ga[sub 1−x] as a metallization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
4. Influence of structural disorder on the temperature dependence of the transport and magnetic properties of β-phaseCoxAl1−xalloy films;Physical Review B;1999-01-01
5. A Theoretical Investigation of the Epitaxial Relationship of NiAl/AlAs;Japanese Journal of Applied Physics;1996-08-15
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