Implanted Interstitial Boron Atoms in Silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654181
Reference5 articles.
1. Photoconductivity Studies of Defects inp-Type Silicon: Boron Interstitial and Aluminum Interstitial Defects
2. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
3. THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON
4. CHANNELING STUDY OF BORON‐IMPLANTED SILICON
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low temperature measurements of electrical activity and Hall mobility of boron implanted silicon;ZAMP Zeitschrift f�r angewandte Mathematik und Physik;1985-09
2. Investigation of ion‐implantation damage with x‐ray double reflection;Applied Physics Letters;1977-02
3. Crystal Defects in Silicon Integrated Circuits—Their Cause and Effect;Properties and Microstructure;1977
4. Defects Introduced into Silicon by Boron Implantation in the MeV Energy Range;Ion Implantation in Semiconductors 1976;1977
5. Investigation of Ion Implantation Damage with X-Ray Double Reflection;Ion Implantation in Semiconductors 1976;1977
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