Anomalous behaviors of E1∕E2 deep level defects in 6H silicon carbide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1853523
Reference11 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Electrical and optical characterization of SiC
3. Capture cross sections of electron irradiation induced defects in 6H–SiC
4. Electron-irradiation-induced deep levels in n-type 6H–SiC
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1. Effect of electron irradiation on defect structure of 6H–SiC grown by PVT method;Superlattices and Microstructures;2009-04
2. Isochronal annealing study of low energy electron irradiated Al-doped p-type 6H silicon carbide with deep level transient spectroscopy;Journal of Applied Physics;2009-03-15
3. Vacancy-type defects in 6H–silicon carbide induced by He-implantation: a positron annihilation spectroscopy approach;Journal of Physics D: Applied Physics;2008-09-19
4. Luminescence properties of bismuth-doped lime silicate glasses;Journal of Alloys and Compounds;2008-09
5. Deep-Level Defects in Nitrogen-Doped 6H-SiC Grown by PVT Method;MRS Proceedings;2008
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