Effect of pre-amorphization of polycrystalline silicon on agglomeration of TiSi2 in subquarter micron Si lines
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371523
Reference16 articles.
1. Silicides for integrated circuits: TiSi2 CoSi2
2. Silicides and local interconnections for high-performance VLSI applications
3. Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines
4. Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines
5. Molecular theory of elastic constants of liquid crystals. II. Application to the biaxial nematic phase
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1. C54-TiSi2 formation using nanosecond laser annealing of A-Si/Ti/A-Si stacks;Thin Solid Films;2024-06
2. Impact of nanosecond laser energy density on the C40-TiSi2 formation and C54-TiSi2 transformation temperature;Journal of Applied Physics;2020-08
3. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11
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