Sputtering of chlorinated silicon surfaces studied by secondary ion mass spectrometry and ion scattering spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334536
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2. Influence of ion mixing on the energy dependence of the ion-assisted chemical etch rate in reactive plasmas;Journal of Applied Physics;2006-09-15
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4. Extreme surface sensitivity in neon–ion scattering from silicon at ejection energies below 80 eV: Evidence for the presence of oxygen on ion bombarded SiO2;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-09
5. Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl2;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-05
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