Spectroscopic observation of interface states of ultrathin silicon oxide-Reference-Cited by-同舟云学术

Spectroscopic observation of interface states of ultrathin silicon oxide

Published:1996-05-01 Issue:9 Volume:79 Page:7051-7057
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Yamashita Y.¹,Namba K.¹,Nakato Y.¹,Nishioka Y.²,Kobayashi H.³

Affiliation:

1. Department of Chemistry, Faculty of Engineering Science Research Center for Photoenergetics of Organic Materials, Osaka University, Toyonaka, Osaka 560, Japan

2. Texas Instruments Tsukuba Research and Development Center Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki 305, Japan

3. PRESTO, Research Development Corporation of Japan Department of Chemistry, Faculty of Engineering Science Research Center for Photoenergetics of Organic Materials, Osaka University, Toyonaka, Osaka 560, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference39 articles.

1. J. M. deLarios, D. B. Kao, B. E. Deal, and C. R. Helms, J. Electrochem. Soc. 138, 2353 (1991).JESOAN0013-4651

2. F. J. Grunthaner and J. Maserjian, IEEE Trans. Nucl. Sci. NS-24, 2108 (1977).IETNAE0018-9499

3. G. Gould and E. A. Irene, J. Electrochem. Soc. 134, 1031 (1987).JESOAN0013-4651

4. T. Hattori, K. Takase, H. Yamagishi, R. Sugino, Y. Nara, and T. Ito, Jpn. J. Appl. Phys. 28, L296 (1989).JJAPA50021-4922

5. K. Prabhakaran, Y. Kobayashi, and T. Ogino, Surf. Sci. 290, 239 (1993).SUSCAS0039-6028

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