Surface controlled InP‐MIS (metal‐insulator‐semiconductor) triodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329127
Reference7 articles.
1. ELECTROLUMINESCENCE USING GaAs MIS STRUCTURES
2. Theory and experiments on an electroluminescent device constructed in the metal-insulator—Semiconductor geometry
3. Characteristics and potential applications of GaAs1-xPx MIS structures
4. Capacitance-voltage and surface photovoltage measurements of pyrolytically deposited SiO2 on InP
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Surface States on the Electrical and Optical Characteristics of InP MIS Capacitor;Physica Status Solidi (a);1996-06-16
2. Interfacial Constraints on III-V Compound MIS Devices;Physics and Chemistry of III-V Compound Semiconductor Interfaces;1985
3. III-V Inversion-Layer Transport;Physics and Chemistry of III-V Compound Semiconductor Interfaces;1985
4. Electron transport in inversion and accumulation layers of III–V compounds;Thin Solid Films;1983-01
5. Effective electron mobility in inversion-mode Al2O3-InP MISFETS;Solid-State Electronics;1982-11
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