Increase of mobility in dual gate amorphous-InGaZnO4 thin-film transistors by pseudo-doping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4816587
Reference26 articles.
1. Present status of amorphous In–Ga–Zn–O thin-film transistors
2. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*
3. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
4. Interface and bulk effects for bias—light-illumination instability in amorphous-In—Ga—Zn—O thin-film transistors
5. Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
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