Lateral damage extension during masked ion implantation into GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363378
Reference16 articles.
1. Selective Mixing of GaAs/(Ga,Al)As Interfaces by Ga+ Implantation
2. Compositional Disordering of GaAs-AlxGa1-xAs Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
3. Amorphisation d'une cible d'AsGa par des ions As
4. Theoretical Considerations on Lateral Spread of Implanted Ions
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