FORC analysis of nanopatterned vs unpatterned films: Coercivity and switching mechanisms

Abstract

We have studied the use of self-assembled block copolymers to pattern multilayers of Co and Pd on silicon wafers. Stacks ranging from four to twelve bilayers of Co (0.3 nm)/Pd (0.8 nm) were sputtered onto Ta/Pd seed layers and capped with 3 nm of Ta and were found to have perpendicular magnetic anisotropy as-deposited. The block copolymer polystyrene- block-poly(ferrocenyl dimethylsilane) (PS-b-PFS) was dissolved in toluene and spun onto the wafers. The polymers were phase-separated by heat treatment, leaving self-assembled PFS spheres embedded in PS, which was removed by oxygen-plasma ashing. The PFS spheres were then used as masks to ion-mill the Co/Pd multilayers into nanopillars. To study the effect of etch time and etch angle on the coercivity distribution, we synthesized samples in a Design of Experiments-(DoE)- in these two factors. Scanning electron micrographs showed nanopillars ranging from 15 to 30 nm in diameter, depending primarily on etch time. M-H loops measured on both patterned and unpatterned wafers showed an increase of up to 130% in overall coercivity upon patterning. First Order Reversal Curves (FORC) were measured, and the resulting FORC distributions displayed using a smoothing program (FORCinel) and one that can display the raw data without smoothing (FORC+). We find that FORC+ reveals information about fine-scale structure and switching mechanism that cannot be seen in the smoothed display.