Density functional theory based study of chlorine doped WS2-metal interface-Reference-Cited by-同舟云学术

Density functional theory based study of chlorine doped WS2-metal interface

Published:2016-03-07 Issue:10 Volume:108 Page:103107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chanana Anuja¹^ORCID,Mahapatra Santanu¹

Affiliation:

1. NanoScale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, Karnataka 560012, India

Funder

Science and Engineering Research Board (SERB)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4943267

Reference27 articles.

1. Single-layer MoS2 transistors

2. Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

3. High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

4. WSe2 field effect transistors with enhanced ambipolar characteristics

5. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Substitutional Doping Strategies for Fermi Level Depinning and Enhanced Interface Quality in WS₂-Metal Contacts;ACS Applied Electronic Materials;2024-05-31

2. Effect of n-type Cl doping on electrical conductivity of few layer WS2;Microsystem Technologies;2024-05-10

3. Ohmic contact in two-dimensional WS2/Hf2CX2 (X = F/OH) and WS2/graphene/Hf2C heterojunctions;Physica E: Low-dimensional Systems and Nanostructures;2024-04

4. Engineering the Electrical and Optical Properties of WS₂ Monolayers via Defect Control;Advanced Science;2023-11-27

5. Reduction of Schottky Barrier Height for Au-WS₂ Interface with Iodine Doping - A Physical Insight;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02