Fabrication and characterization of metal-oxide-nitride-oxynitride-polysilicon nonvolatile semiconductor memory device with silicon oxynitride (SiOxNy) as tunneling layer on glass-Reference-Cited by-同舟云学术

Fabrication and characterization of metal-oxide-nitride-oxynitride-polysilicon nonvolatile semiconductor memory device with silicon oxynitride (SiOxNy) as tunneling layer on glass

Published:2007-11 Issue:9 Volume:102 Page:094502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jung Sungwook,Kim Jaehong,Son Hyukjoo,Hwang Sunghyun,Jang Kyungsoo,Lee Jungin,Lee Kwangsoo,Park Hyungjun,Kim Kyunghae,Yi Junsin,Chung Hokyoon,Choi Byoungdeog,Lee Kiyong

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2802201

Reference10 articles.

1. A high-performance polysilicon thin-film transistor using XeCl excimer laser crystallization of pre-patterned amorphous Si films

2. 18.2: A 2.15 inch QCIF Reflective Color TFT-LCD with Digital memory on Glass (DMOG)

3. 18.5L: Late-News Paper: low power Consumption TFT-LCD with Dynamic Memory Embedded in Pixels

4. 22.1: Ultra-Low-Power Polysilicon AMLCD with Full Integration

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