Oxygen vacancy induced phase and conductivity transition of epitaxial BaTiO3−δ films directly grown on Ge (001) without surface passivation-Reference-Cited by-同舟云学术

Oxygen vacancy induced phase and conductivity transition of epitaxial BaTiO3−δ films directly grown on Ge (001) without surface passivation

Published:2021-01-28 Issue:4 Volume:129 Page:045302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dai Liyan¹^ORCID,Niu Gang¹^ORCID,Zhao Jinyan¹,Xue Yingxian¹,Luo Ren¹^ORCID,Chen Bohan¹,An Ruihua¹,Sun Yanxiao¹,Feng Boyuan²,Ding Sunan²,Luo Wenbo³^ORCID,Ye Zuo-Guang⁴^ORCID,Ren Wei¹

Affiliation:

1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China

2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

3. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China

4. Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada

Funder

Natural Science Fundamental Research Project of Shaanxi Province of China

China Postdoctoral Science Foundation

Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Overseas Expertise Introduction Project for Discipline Innovation

Key Research and Development Projects of Shaanxi Province

National Key Laboratory of Electronic Thin Films and Integrated Devices

Publisher

AIP Publishing

Subject