Hall mobility in multicrystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3622620
Reference27 articles.
1. Electron and hole mobilities in silicon as a function of concentration and temperature
2. Resistivity‐Dopant Density Relationship for Boron‐Doped Silicon
3. Resistivity‐Dopant Density Relationship for Phosphorus‐Doped Silicon
4. Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level
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