Structure-sensitive oxidation of the indium phosphide (001) surface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1471577
Reference45 articles.
1. Chemistry and kinetics of the GaAs oxidation by plasma anodization: Anin situreal-time ellipsometric study
2. High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links
3. High-speed integrated optoelectronic modulation circuit
4. Growth optimization for p-n junction placement in the integration of heterojunction bipolar transistors and quantum well modulators on InP
5. A 50-MHz-55-GHz multidecade InP-based HBT distributed amplifier
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