Method for shallow impurity characterization in ultrapure silicon using photoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1515375
Reference9 articles.
1. Determination of boron and phosphorus concentration in silicon by photoluminescence analysis
2. Calibration of the photoluminescence technique for measuring B, P and Al concentrations in Si in the range 1012to 1015cm-3using Fourier transform spectroscopy
3. Calibration of the Photoluminescence Method for Determining As and Al Concentrations in Si
4. Photoluminescence assessment of B, P, and Al in Si wafers: The problem of sample heating by a laser beam
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