Sub-picosecond electron relaxation of near-infrared intersubband transitions in n-doped (CdS/ZnSe)/BeTe quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1515371
Reference10 articles.
1. Intersubband relaxation time for InxGa1−xAs/AlAs quantum wells with large transition energy
2. Nonlinearity and recovery time of 1.55 [micro sign]m intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells
3. Sub-picosecond electron scattering time for ≃ 1.55 [micro sign]m intersubband transitions in GaN/AlGaN multiple quantum wells
4. Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells
5. Molecular‐beam epitaxy of beryllium‐chalcogenide‐based thin films and quantum‐well structures
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1. Intersubband Relaxation in CdSe Colloidal Quantum Wells;ACS Nano;2020-08-31
2. Polarized near-infrared intersubband absorptions in CdSe colloidal quantum wells;Nature Communications;2019-10-04
3. Molecular Beam Epitaxy-Grown Wide Band Gap II–VI Semiconductors for Intersubband Device Applications;Molecular Beam Epitaxy;2018
4. MgSe/CdSe coupled quantum wells with optimized MgSe coupling layer thickness and near infrared intersubband absorption around 1.55μm;Journal of Physics D: Applied Physics;2016-02-17
5. Strain compensated CdSe/ZnSe/ZnCdMgSe quantum wells as building blocks for near to mid-IR intersubband devices;Journal of Crystal Growth;2015-09
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