Metastable defect migration under high carrier injection in hydrogenated amorphous silicon p-i-n solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2010623
Reference41 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Stability ofn‐i‐pamorphous silicon solar cells
3. Influence of bias and photo stress on a-Si:H diodes with nin- and pip-structures
4. Metastable defects in hydrogenated amorphous silicon
5. The relationship between hydrogen content, weak bond density and Staebler-Wronski defects in amorphous silicon
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1. Performance and stability improvement of single junction a-Si:H solar cell by interface engineering;Journal of Materials Science: Materials in Electronics;2019-06-01
2. Separation of bulk and contact interface degradation in thin film silicon solar cells;Journal of Renewable and Sustainable Energy;2015-11
3. Computer modelling and analysis of the photodegradation effect in a-Si:H p—i—n solar cell;Journal of Semiconductors;2015-01
4. Amorphous Silicon-Based Solar Cells;Handbook of Photovoltaic Science and Engineering;2011-03-01
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