Trade-off between variability and retention of memristive epitaxial SrTiO3devices
Author:
Affiliation:
1. Peter Gruenberg Institute 7, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany and JARA-FIT, RWTH Aachen University, 52056 Aachen, Germany
Funder
Federal Ministry of Education and Research Project NEUROTEC
Deutsche Forschungsgemeinschaft
Helmholtz Association
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0035707
Reference46 articles.
1. Resistive switching in transition metal oxides
2. R. Waser and M. Aono,Nanoscience and Technology A Collection of Reviews from Nature Journals(Nature Materials, 2009), p. 158.
3. Memristive switching mechanism for metal/oxide/metal nanodevices
4. Metal–Oxide RRAM
5. The coexistence of threshold and memory switching characteristics of ALD HfO2 memristor synaptic arrays for energy-efficient neuromorphic computing
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