Ion blistering of boron-doped silicon: The critical role of defect passivation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2139845
Reference12 articles.
1. Silicon on insulator material technology
2. Frontiers of silicon-on-insulator
3. Spectroscopic studies of H-decorated interstitials and vacancies in thin-film silicon exfoliation
4. Raman-scattering elucidation of the giant isotope effect in hydrogen-ion blistering of silicon
5. Theory of the Nucleation, Growth, and Structure of Hydrogen-Induced Extended Defects in Silicon
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4. (Invited) Ion-Cut from Smart to Smarter: Ulrich Gösele's Impact on Science and Technology of Ultrathin Layer Transfer;ECS Transactions;2010-10-01
5. Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN;Physical Review B;2010-03-05
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