Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance-Reference-Cited by-同舟云学术

Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance

Published:2010-10-18 Issue:16 Volume:97 Page:162105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Joon Seok,Kim Tae Sang,Son Kyoung Seok,Lee Eunha,Jung Ji Sim,Lee Kwang-Hee,Maeng Wan-Joo,Kim Hyun-Suk,Kim Eok Su,Park Kyung-Bae,Kwon Jang-Yeon,Ryu Myung Kwan,Lee Sang Yoon

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3505151

Reference14 articles.

1. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

4. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

5. The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination

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