A two-dimensional analytical model for short channel junctionless double-gate MOSFETs-Reference-Cited by-同舟云学术

A two-dimensional analytical model for short channel junctionless double-gate MOSFETs

Published:2015-05 Issue:5 Volume:5 Page:057122
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Jiang Chunsheng¹^ORCID,Liang Renrong¹,Wang Jing¹,Xu Jun¹

Affiliation:

1. Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People’s Republic of China

Funder

National Science and Technology Major Project

State Key Development Program for Basic Research of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/5/1.4921086.pdf?itemId=/content/aip/journal/adva/5/5/10.1063/1.4921086&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference35 articles.

1. CMOS scaling into the nanometer regime

2. Recent Advances in High Performance CMOS Transistors: From Planar to Non-Planar

3. The SOI MOSFET: from Single Gate to Multigate

4. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

5. Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

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