Si/Si1−xGex heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365696
Reference21 articles.
1. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
2. Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure
3. Electron transport properties of Si/SiGe heterostructures: Measurements and device implications
4. Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance
5. High-performance Si/SiGe n-type modulation-doped transistors
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