Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices-Reference-Cited by-同舟云学术

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Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices

Published:2007-12-03 Issue:23 Volume:91 Page:231914
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Czernecki R.,Krukowski S.,Targowski G.,Prystawko P.,Sarzynski M.,Krysko M.,Kamler G.,Grzegory I.,Leszczynski M.,Porowski S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2823587

Reference7 articles.

1. GaN: Processing, defects, and devices

2. High pressure growth of bulk GaN from solutions in gallium

3. Epitaxy on GaN bulk crystals

4. Defect-selective etching of GaN in a modified molten bases system

5. Bowing of GaN bulk crystals with mismatched epitaxial structures of (AlInGa)N

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1. Electrically pumped blue laser diodes with nanoporous bottom cladding;Optics Express;2022-03-15

2. Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N;Journal of Applied Physics;2016-07-07

3. Hybrid reciprocal lattice: application to layer stress determination in GaAlN/GaN(0001) systems with patterned substrates;Journal of Applied Crystallography;2016-04-22

4. InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (112¯2) GaN substrates;physica status solidi (b);2015-09-21

5. III-V Compound Semiconductor Optoelectronic Devices;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-12-15

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