Capacitance switching in SiO2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3224191
Reference12 articles.
1. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/
2. Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing
3. Electronic properties of Ge nanocrystals for non volatile memory applications
4. Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation
5. Visible photoluminescence of Ge microcrystals embedded in SiO2glassy matrices
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optoelectric charging-discharging of Ge nanocrystals in floating gate memory;Applied Physics Letters;2018-11-19
2. Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure;Journal of Alloys and Compounds;2017-06
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