The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature-illumination stress-Reference-Cited by-同舟云学术

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The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature-illumination stress

Published:2010-05-10 Issue:19 Volume:96 Page:193506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jung Ji Sim,Son Kyoung Seok,Lee Kwang-Hee,Park Joon Seok,Kim Tae Sang,Kwon Jang-Yeon,Chung Kwun-Bum,Park Jin-Seong,Koo Bonwon,Lee Sangyun

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3429588

Reference24 articles.

1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

2. Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

3. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

4. Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment

5. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

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1. Highly conductive Ag-SiNx composite thin film anode engineering for transparent battery;Composites Part B: Engineering;2023-08

2. A Multi-Finger GHz Frequency Doubler Based on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors;IEEE Access;2023

3. Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression;Japanese Journal of Applied Physics;2019-05-09

4. Electrical Characterization of Zinc-Rich Amorphous In-Ga-Zn-O Thin Film Transistors;physica status solidi (a);2018-08-07

5. Evaluation of stress stabilities in amorphous In–Ga–Zn–O thin-film transistors: Effect of passivation with Si-based resin;Japanese Journal of Applied Physics;2017-12-19

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