Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1380405
Reference11 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Self-ordering and confinement in strained InGaAs/AlGaAs V-groove quantum wires grown by low-pressure organometallic chemical vapor deposition
3. Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates
4. Selective carrier injection into V-groove quantum wires
5. Effect of lateral confinement on valence-band mixing and polarization anisotropy in quantum wires
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1. Multi-color photon sorting in plasmonic microcavities;Journal of Optics;2013-11-27
2. GaInAsP/InP Quantum Wire Lasers;IEEE Journal of Selected Topics in Quantum Electronics;2009
3. Exciton recombination dynamics inInAs∕InPself-assembled quantum wires;Physical Review B;2005-05-31
4. Carrier recombination kinetics in (311)A InGaAs sidewall quantum wires;Physica E: Low-dimensional Systems and Nanostructures;2004-07
5. Influence of the growth conditions on the ridge morphology during GaAs deposition on GaAs (001) patterned substrates;Journal of Applied Physics;2004-06
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