Recalescenceafterbulk solidification in germanium films melted by ns laser pulses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1534374
Reference26 articles.
1. Advanced excimer-laser annealing process for quasi single-crystal silicon thin-film devices
2. A study of the mechanism of metal deposition by the laser-induced forward transfer process
3. Excimer laser-induced temperature field in melting and resolidification of silicon thin films
4. Relationship between fluence gradient and lateral grain growth in spatially controlled excimer laser crystallization of amorphous silicon films
5. Solid–liquid interface velocity and diffusivity in laser-melt amorphous silicon
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dynamics of solidification in Al thin films measured using a nanocalorimeter;Journal of Applied Physics;2011-12
2. In-Situ and Ex-Situ Measurements on Silicon Thin Films Fabricated by Excimer Laser Annealing;Journal of Physics: Conference Series;2006-10-01
3. Optical evidence for a self-propagating molten buried layer in germanium films upon nanosecond laser irradiation;Journal of Applied Physics;2005-05-15
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