Influence of deep levels on capacitance-voltage characteristics of AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3643000
Reference21 articles.
1. Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy
2. Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect
3. Trap behaviors in AlGaN–GaN heterostructures by C–V characterization
4. Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au∕GaN Schottky contacts
5. Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors
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1. Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress;IEEE Transactions on Electron Devices;2018-07
2. Temperature-dependent power-law analysis of capacitance-voltage for GaN-based pn junction;Journal of Applied Physics;2018-04-07
3. Analysis of Capacitance-Voltage-Temperature Characteristics of GaN High-Electron-Mobility Transistors;Chinese Physics Letters;2015-04
4. Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures;Physica B: Condensed Matter;2015-01
5. Negative differential resistance and resistance switching behaviors in BaTiO3 thin films;Journal of Applied Physics;2014-05-28
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