Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au∕GaN Schottky contacts
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2358207
Reference14 articles.
1. InGaN Single-Quantum-Well LEDs
2. Influence of premetallization surface treatment on the formation of Schottky Au-nGaN contacts
3. Film thickness degradation of Au/GaN Schottky contact characteristics
4. Electrical characterization of GaN p-n junctions with and without threading dislocations
5. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling of frequency-dependent negative differential capacitance in InGaAs/InP photodiode;Infrared Physics & Technology;2018-03
2. Frequency dependence of negative differential capacitance in p-i-n InGaAs photodetector at room temperature;AOPC 2017: Optical Sensing and Imaging Technology and Applications;2017-10-24
3. An Optically Readable InGaN/GaN RRAM;IEEE Transactions on Electron Devices;2016-06
4. Negative differential resistance and resistance switching behaviors in BaTiO3 thin films;Journal of Applied Physics;2014-05-28
5. Effect of threading dislocation density and dielectric layer on temperature-dependent electrical characteristics of high-hole-mobility metal semiconductor field effect transistors fabricated from wafer-scale epitaxially grown p-type germanium on silicon substrates;Journal of Applied Physics;2014-03-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3