Experimental determination of hot‐carrier scattering processes in AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98361
Reference8 articles.
1. Dynamics of Photoexcited GaAs Band-Edge Absorption with Subpicosecond Resolution
2. Direct Measurement of Hot-Electron Relaxation by Picosecond Spectroscopy
3. Femtosecond optical measurement of hot‐carrier relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structures
4. Ultrafast relaxation dynamics of photoexcited carriers in GaAs and related compounds
5. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
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2. Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain terahertz spectroscopy;Physical Review B;2002-03-12
3. Initial Relaxation of Photoexcited Carriers;Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures;1999
4. Separating the coherent and incoherent effects in optical correlation experiments on semiconductors and other saturable absorbers;Review of Scientific Instruments;1996-02
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