Cleaning of Si (100) surface by As ionized cluster beam prior to epitaxial growth of GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353934
Reference19 articles.
1. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
2. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
3. Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
4. LEED study of the stepped surface of vicinal Si (100)
5. Epitaxial growth and material properties of GaAs on Si grown by MOCVD
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1. Contact angle evaluation for laser cleaning efficiency;Electronics Letters;2009
2. Laser cleaning technology of the contact hole for semiconductor manufacturing;Fourth International Symposium on Laser Precision Microfabrication;2003-11-20
3. Dry Cleaning Technology of Silicon Wafer with a Line Beam for Semiconductor Fabrication by KrF Excimer Laser;Japanese Journal of Applied Physics;2002-07-15
4. Effect of a Cr-Mo Underlayer on a CoPt-SiO2 Thin Film;Journal of the Magnetics Society of Japan;1999
5. ICB deposition and epitaxial growth of GaAs thin films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-05
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