Structural perfection of InGaAs/InP strained‐layer superlattices grown by gas source molecular‐beam epitaxy: A high‐resolution x‐ray diffraction study-Reference-Cited by-同舟云学术

Structural perfection of InGaAs/InP strained‐layer superlattices grown by gas source molecular‐beam epitaxy: A high‐resolution x‐ray diffraction study

Published:1989-10-15 Issue:8 Volume:66 Page:3635-3638
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Vandenberg J. M.,Gershoni D.,Hamm R. A.,Panish M. B.,Temkin H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.344072

Reference14 articles.

1. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers

2. InGaAs/InP superlattice avalanche photodetectors grown by gas source molecular beam epitaxy

3. InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy

4. High‐resolution x‐ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas‐source molecular beam epitaxy

5. High‐resolution x‐ray diffraction studies of InGaAs(P)/InP superlattices grown by gas‐source molecular‐beam epitaxy

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