InGaAs/InP superlattice avalanche photodetectors grown by gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97517
Reference19 articles.
1. Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition
2. Double heterostructure and multiquantum-well lasers at 1.5–1.7 μm grown by atmospheric pressure MOVPE
3. Gas source molecular beam epitaxy of GaxIn1−xPyAs1−y
4. GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy
5. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of GSMBE growth and characteristics of high-quality strained quantum wells;Journal of Crystal Growth;1997-09
2. GSMBE growth and characterization of strained-layer MQWs in a P-i-N Configuration;Journal of Crystal Growth;1997-05
3. Gas-Source Molecular Beam Epitaxy: GaxIn1−xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties;Molecular Beam Epitaxy;1995
4. Chapter 5 Optical Properties of Ga1-xInxAs/InP Quantum Wells;Semiconductors and Semimetals;1994
5. Absorption spectroscopy on room temperature excitonic transitions in strained layer InGaAs/InGaAlAs multiquantum‐well structures;Journal of Applied Physics;1993-07
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